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參數(shù)資料
| 型號： | 5082-2303 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 5082-2303 |
3
Low 1/f (Flicker) Noise Diodes
Min.
Max.
V
F = 1 V Max.
Max.
Part
Breakdown
Forward
at Forward
Reverse Leakage
Capaci-
Number
Package
Voltage
Current
tance
5082-
Outline
V
BR (V)
V
F (mV)
I
F (mA)
I
R (nA) at VR (V)
C
T (pF)
2303
15
20
400
35
500
15
1.0
2900
15
10
400
20
100
5
1.2
Test
I
R = 10 AIF = 1 mA
V
R = 0 V
Conditions
f =1.0 MHz
Note:
Effective Carrier Lifetime (
τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA.
Matched Pairs and Quads
Basic
Matched
Part Number
Pair
Quad
Batch
5082-
Unconnected
Matched[1]
Test Conditions
2900
V
F at IF = 1.0, 10 mA
2800
5082-2804
5082-2805
V
F at IF = 0.5, 5 mA
V
F = 20 mV
V
F = 20 mV
*I
F = 10 mA
C
O at f = 1.0 MHz
2811
5082-2826
V
F at IF = 10 mA
V
F = 10 mV
C
O at f = 1.0 MHz
C
O = 0.1 pF
2835
5082-2080
V
F at IF =10 mA
V
F = 10 mV
C
O at f = 1.0 MHz
C
O = 0.1 pF
Note:
1. Batch matched devices have a minimum batch size of 50 devices.
SPICE Parameters
Parameter
Units
5082-2800
5082-2810
5082-2811
5082-2835
5082-2303
5082-2900
B
V
75
25
18
9
25
10
C
J0
pF
1.6
0.8
1.0
0.7
1.1
E
G
eV
0.69
I
BV
A
10E - 5
I
S
A
2.2 x 10E - 9
1.1 x 10E - 9
0.3 x 10E - 8
2.2 x 10E - 8
7 x 1.0E-9
10E-8
N
1.08
R
S
25
10
5
10
15
P
B
V
0.6
0.56
0.64
P
T
22
2
M
0.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5082-2900 | SILICON, MIXER DIODE |
| 5082-2900 | SILICON, MIXER DIODE |
| 5082-2303 | SILICON, MIXER DIODE |
| 5082-2835 | SILICON, UHF BAND, MIXER DIODE |
| 5082-2811 | SILICON, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5082-2350 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
| 5082-2351 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
| 5082-2356 | 制造商:Hewlett Packard Co 功能描述: |
| 5082-2750 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DIODE |
| 5082-2755 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DIODE |
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