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參數(shù)資料
| 型號： | 5082-2303 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 47K |
| 代理商： | 5082-2303 |
2
Package Characteristics
Outline 15
Lead Material ........................................................................................ Dumet
Lead Finish .............................................................................. 95-5% Tin-Lead
Max. Soldering Temperature ................................................ 260
°C for 5 sec
Min. Lead Strength .................................................................... 4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ................................................................................ 2.0 nH
2800 Series: ........................................................................................ 2.0 nH
2300 Series, 2900: .............................................................................. 3.0 nH
Typical Package Capacitance
1N5711, 1N5712: ................................................................................ 0.2 pF
2800 Series: ........................................................................................ 0.2 pF
2300 Series, 2900: ............................................................................ 0.07 pF
The leads on the Outline 15 package should be restricted so that the
bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel
specification is patterned after RS-296-D.
Electrical Specifications at T
A = 25°C
General Purpose Diodes
Min.
Max.
V
F = 1 V Max.
Max.
Breakdown
Forward
at Forward
Reverse Leakage
Capaci-
Part
Package
Voltage
Current
tance
Number
Outline
V
BR (V)
V
F (mV)
I
F (mA)
I
R (nA) at VR (V)
C
T (pF)
5082-2800
15
70
410
15
200
50
2.0
1N5711
15
70
410
15
200
50
2.0
5082-2810
15
20
410
35
100
15
1.2
1N5712
15
20
550
35
150
16
1.2
5082-2811
15
410
20
100
8
1.2
5082-2835
15
8*
340
10*
100
1
1.0
Test
I
R = 10 AIF = 1 mA
*V
F = 0.45 V
V
R = 0 V
Conditions
*I
R = 100 A
f =1.0 MHz
Note:
Effective Carrier Lifetime (
τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835
which is measured at 20 mA.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5082-2811 | SILICON, MIXER DIODE |
| 5082-2900 | SILICON, MIXER DIODE |
| 5082-2810 | SILICON, MIXER DIODE |
| 5082-2835TXV | SILICON, UHF BAND, MIXER DIODE |
| 5082-2835 | SILICON, UHF BAND, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5082-2350 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
| 5082-2351 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
| 5082-2356 | 制造商:Hewlett Packard Co 功能描述: |
| 5082-2750 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DIODE |
| 5082-2755 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DIODE |
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