- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄91181 > 5082-2207 SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | 5082-2207 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 封裝： | PLASTIC, C2, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 160K |
| 代理商： | 5082-2207 |
2
Maximum Ratings
Operating and Storage Temperature Range
C2 Packaged Diodes ........................................................ -65
°C to +150 °C
Pulse Power Incident at T
CASE = 25°C ..................................................... 1 W
(1
s pulse, Du = 0.001)
CW Power Dissipation at T
CASE = 25°C
(Measured in an infinite heat sink) ............................................... 125 mW
Derate linearly to zero at maximum operating temperature.
Diode Mounting Temperature in Packages
C2 ............................................................................. 235
°C for 10 sec max.
Peak Inverse Voltage .................................................................................. 4 V
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
RF Electrical Specifications at T
A = 25°C
Maximum
IF
Typical
Part
Test
Noise
Impedance
Junction
Number
Freq.
Figure
Z
IF ()
Maximum
Capacitance
5082-
(GHz)
Barrier
NF (dB)
Min.
Max.
SWR
Package
C
j (pF)
2207
9.375
Medium
6.0
200
400
1.5:1
Broadband C2
0.18
2209
Medium
6.5
2.0:1
2794
Low
6.5
150
350
2.0:1
Test
DC Load Resistance = 0
V = 0
Conditions
L.O. Power = 1 mW
IF = 30 MHz, 1.5 dB NF
*Minimum batch size 20 units.
Low Barrier (Zero Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
T
SS
-44
dBm
Zero Bias, R
L = 10 M
P
in = - 30 dBm
Voltage Sensitivity
γ
10
mV/
W
Video Bandwidth = 2 MHz
f = 10 GHz
Video Resistance
R
V
1.8
Μ
Typical Detector Characteristics at T
A = 25°C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
T
SS
-54
dBm
20
A Bias, R
L = 100 K
P
in = - 40 dBm
Voltage Sensitivity
γ
6.6
mV/
W
Video Bandwidth = 2 MHz
f = 10 GHz
Video Resistance
R
V
1400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5082-2207 | SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 5082-2209 | SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 5082-2209 | SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 5082-2794 | SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 5082-2800 | SILICON, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5082-2209 | 制造商:Agilent Technologies 功能描述:SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE 制造商:Hewlett Packard Co 功能描述:SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 5082-2240-00 | 功能描述:射頻適配器 - 系列之間 ADPTR-SMC PLG/SMA JK RoHS:否 制造商:Amphenol Connex 側(cè)1射頻系列:SMA 側(cè)1性別:Jack (Female) 側(cè)1極性:Normal 側(cè)1體類型:Bulkhead 側(cè)2射頻系列:TNC 側(cè)2性別:Jack (Female) 側(cè)2極性:Normal 側(cè)2體類型:Bulkhead 阻抗:50 Ohms 適配器類型:Straight 頻率范圍:DC to 11 GHz 觸點(diǎn)電鍍:Gold 外殼電鍍:Gold 主體材料:Brass |
| 5082-2241-00 | 功能描述:射頻適配器 - 系列之間 SMA Plug to SMC Jack RoHS:否 制造商:Amphenol Connex 側(cè)1射頻系列:SMA 側(cè)1性別:Jack (Female) 側(cè)1極性:Normal 側(cè)1體類型:Bulkhead 側(cè)2射頻系列:TNC 側(cè)2性別:Jack (Female) 側(cè)2極性:Normal 側(cè)2體類型:Bulkhead 阻抗:50 Ohms 適配器類型:Straight 頻率范圍:DC to 11 GHz 觸點(diǎn)電鍍:Gold 外殼電鍍:Gold 主體材料:Brass |
| 5082-2271 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DUAL DIODE |
| 5082-2277 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DUAL DIODE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。