- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50202 > 4N37 (VISHAY SEMICONDUCTORS) Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP PDF資料下載
參數(shù)資料
| 型號(hào)： | 4N37 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 125K |
| 代理商： | 4N37 |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 81181
154
Rev. 1.2, 07-Jan-10
4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering condditions for through hole devices (DIP).
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Indicates JEDEC registered value.
COUPLER
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
Forward voltage (2)
IF = 10 mA
VF
1.3
1.5
V
IF = 10 mA, Tamb = - 55 °C
VF
0.9
1.3
1.7
V
Reverse current (2)
VR = 6 V
IR
0.1
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
OUTPUT
Collector emitter breakdown
voltage(2)
IC = 1 mA
4N35
BVCEO
30
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
Emitter collector breakdown
voltage(2)
IE = 100 μA
BVECO
7V
OUTPUT
Collector base breakdown
voltage (2)
IC = 100 μA, IB = 1 μA
4N35
BVCBO
70
V
4N36
BVCBO
70
V
4N37
BVCBO
70
V
Collector emitter leakage current (2)
VCE = 10 V, IF = 0
4N35
ICEO
550
nA
4N36
ICEO
550
nA
VCE = 10 V, IF = 0
4N37
ICEO
550
nA
VCE = 30 V, IF = 0,
Tamb = 100 °C
4N35
ICEO
500
μA
4N36
ICEO
500
μA
4N37
ICEO
500
μA
Collector emitter capacitance
VCE = 0
CCE
6pF
COUPLER
Resistance, input output (2)
VIO = 500 V
RIO
1011
Ω
Capacitance, input output
f = 1 MHz
CIO
0.6
pF
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。