- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄30703 > 4AM15 (Hitachi,Ltd.) Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) PDF資料下載
參數(shù)資料
| 型號(hào)： | 4AM15 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET陣列（不適用溝道/頁(yè)溝道功率MOSFET的陣列） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 4AM15 |
4AM15
3
Electrical Characteristics (Ta = 25°C)
N Channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 160 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
4.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.33
0.5
I
D = 2 A, VGS = 10 V*
1
Forward transfer admittance
|y
fs|
1.5
2.5
—
S
I
D = 2 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
750
—
pF
V
DS = 10 V
Output capacitance
Coss
—
260
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
40
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—19
—
ns
I
D = 2 A
Rise time
t
r
—26
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—45
—
ns
R
L = 15
Fall time
t
f
—24
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 4 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
125
—
ns
I
F = 4 A, VGS = 0,
diF/dt = 100 A/s
Note
1. Pulse Test
See characteristic curve of 2SK1957 and 2SJ410
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 4B04B-50X-XXXJ | Thick Film Surge Resistor Networks |
| 4B04B-50X-XXX | Thick Film Surge Resistor Networks |
| 4B04B-523-RC | Line Protection Network |
| 4B04B-524-RC | Line Protection Network |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4AM16 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel/P-Channel Power MOSFET Array |
| 4AM17 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N/P Channel MOS FET High Speed Power Switching |
| 4AM2342-4TN00-0EA0 | 制造商:Siemens 功能描述:Bulk |
| 4AM2642-4TN00-0EA0 | 制造商:Siemens 功能描述: |
| 4AM2642-5AT10-0FA0 | 制造商:Siemens 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。