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參數(shù)資料
| 型號(hào)： | 4AM14 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Complementary Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel互補(bǔ)功率場效應(yīng)晶體管陣列（不適用溝道/頁溝道功率MOSFET的陣列） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 4AM14 |
4AM14
4
6
4
2
50
100
150
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
Channel
Dissipation
Pch
(W)
0
Condition : Channel Dissipation
of each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
48
32
16
50
100
150
Case Temperature Tc (°C)
Maximum Channel Dissipation Curve
Channel
Dissipation
Pch
(W)
0
Condition : Channel Dissipation
of each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
50
30
10
3
1
0.3
0.1
0.05
0.1
0.3
1
3
10
30
100
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
Ta = 25°C
Operation in this area
is limited by R
(on)
DS
10
s
100
s
Maximum Safe Operation Area
(N-Channel)
– 50
– 30
– 10
– 3
– 1
– 0.3
– 0.1
– 0.05
– 0.1
– 0.3
– 1
– 3
– 10
– 30
– 100
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
Ta = 25°C
Operation in this area
is limited by R
(on)
DS
10 s
100
s
Maximum Safe Operation Area
(P-Channel)
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|---|---|
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