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參數(shù)資料
| 型號： | 3HN04MH |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 3HN04MH |
3HN04MH
No.8643-3/4
IT10830
0
0.2
0.6
1.0
0.4
0.8
2.0
1.4
1.2
1.6
1.8
0
1
2
6
4
3
7
8
9
5
10
IT10829
7
5
0.01
7
100
10
5
3
2
3
2
IT10827
IT10825
0.1
2
3
5
2
7
1.0
3
5
7
0
2
Drain-to-Source Voltage, VDS -- V
A S O
4
8
6
10
10
5
3
7
3
2
5
2
IT10828
IT10826
0.2
0.4
Diode Forward Voltage, VSD -- V
0.6
0.8
1.0
1.2
0.001
0.01
7
5
3
2
2
0.1
7
5
3
2
2
3
5
7
2
0.1
3
2
3
5
7
1.0
0.01
2
2 3
5 70.1
Drain-to-Source Voltage, VDS -- V
2
3
2
3
5
3
5
710
5 71.0
0.01
VGS=0V
-
°
C
2
°
C
T7
°
C
td(on)
td(off)
tf
tr
VDD=15V
VGS=10V
Ciss
Coss
Crss
VDS=10V
ID=300mA
≤
10
μ
s
IDP=1.2A
ID=300mA
Operation in this
area is limited by RDS(on).
Ta=25
°
C
Single pulse
Mounted on a ceramic board (900mm
2
0.8mm)
1m
1m
DCoeain(T=5
°
C
0.001
10
0.01
Drain Current, ID -- A
2
3
5
7
2
0.1
3
5
7
2
1.0
3
5
7
100
7
5
3
2
7
5
3
2
VDS=10V
75
°
C
T=-25
°
C
0
0
20
40
Ambient Temperature, Ta --
°
C
0.1
0.2
0.3
0.4
0.5
0.7
0.6
60
80
100
120
140
160
IT10831
25
°
C
1.0
7
5
3
f=1MHz
100
μ
s
PD -- Ta
A
Mounedonaceamcboad(900mm
2
08mm
VGS -- Qg
SW Time -- ID
Ciss, Coss, Crss -- VDS
y
fs
-- ID
IS -- VSD
Drain Current, ID -- A
S
F
y
f
S
C
Total Gate Charge, Qg -- nC
G
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3HN04MH-TL-E | 制造商:SANYO 功能描述:Nch 30V 0.3A 0.9 lbogR Tape & Reel 制造商:Sanyo 功能描述:0 |
| 3HN04S | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 3HN04SS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 3HN04SS-TL-H | 制造商:SANYO 功能描述:Nch 30V 0.3A 0.9 rreo Tape & Reel 制造商:Sanyo 功能描述:0 |
| 3HP04CH | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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