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參數(shù)資料
| 型號： | 2SK522 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 硅N溝道結(jié)場效應(yīng)管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SK522 |
2SK522
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
I
G
I
D
Pch
–30
V
Gate current
10
mA
Drain current
20
mA
Channel power dissipation
200
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
–30
—
—
V
I
G
= –100
μ
A, I
S
= 0
Gate cutoff current
I
GSS
I
DSS
*
1
V
GS(off)
—
—
–10
nA
V
GS
= –0.5 V, V
DS
= 0
V
DS
= 5 V, V
GS
= 0
V
DS
= 5 V, I
D
= 10
μ
A
V
DS
= 5 V, V
GS
= 0, f = 1 kHz
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Drain current
4
—
20
mA
Gate to source cutoff voltage
—
—
–3
V
Forward transfer admittance
fs
y
8
10
—
mS
Input capacitance
Ciss
—
6.8
—
pF
Reverse transfer capacitance
Crss
—
0.1
—
pF
Power gain
PG
20
27
—
dB
V
= 5 V, V
GS
= 0,
f = 100 MHz
Noise figure
Note:
Drain
NF
—
1.7
2.5
dB
1. The 2SK522 is grouped by I
DSS
as follows.
D
E
F
I
DSS
4 to 8
6 to 10
10 to 20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK522D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 4MA I(DSS) | SPAK |
| 2SK522E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK |
| 2SK522F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SPAK |
| 2SK525 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SK526 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MOTOR AND SOLENOID DRIVE APPLICATIONS |
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