參數(shù)資料
型號(hào)： 2SK4143-S17-AY
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOS FET
中文描述： 開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 2/8頁
文件大?。?/td> 196K
代理商： 2SK4143-S17-AY
Data Sheet D18772EJ1V0DS
2
2SK4143
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
5
10
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 10 A
37
44
m
Ω
R
DS(on)2
V
GS
= 4.0 V, I
D
= 10 A
44
78
m
Ω
Input Capacitance
C
iss
V
DS
= 10 V,
820
pF
Output Capacitance
C
oss
V
GS
= 0 V,
150
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
62
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30 V, I
D
= 10 A,
8.6
ns
Rise Time
t
r
V
GS
= 10 V,
8.6
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
Ω
38
ns
Fall Time
t
f
7.1
ns
Total Gate Charge
Q
G
V
DD
= 48 V,
18
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V,
2.4
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 20 A
4.8
nC
V
F(S-D)
I
F
= 20 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
I
F
= 20 A, V
GS
= 0 V,
39
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
50
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
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