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參數(shù)資料
| 型號(hào)： | 2SK4125 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 2SK4125 |
2SK4125
No. A0747-2/5
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=
±
30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8.5A
ID=7A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=17A
VDS=200V, VGS=10V, ID=17A
VDS=200V, VGS=10V, ID=17A
IS=17A, VGS=0V
600
V
μ
A
nA
V
S
100
±
100
3
5
4.5
9
0.47
1200
220
0.61
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
50
26.5
82
145
52
46
8.3
26.7
1.0
1.3
Package Dimensions
unit : mm (typ)
7503-004
Switching Time Test Circuit
Avalanche Resistance Test Circuit
14.0
15.6
4.8
2.0
2
2
3
2
1
1
1
3.2
1
1.6
1.0
0.6
5.45
5.45
1
2
3
0.6
2.0
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
PW=10
μ
s
D.C.
≤
0.5%
P.G
RGS=50
G
S
D
ID=8.5A
RL=23.5
VDD=200V
VOUT
2SK4125
VIN
10V
0V
VIN
50
≥
50
RG
VDD
L
10V
0V
2SK4125
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PDF描述 |
|---|---|
| 2SK4126 | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SK413 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK414 | TRANSISTOR | MOSFET | N-CHANNEL | 160V V(BR)DSS | 8A I(D) | TO-247VAR |
| 2SK418 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK419 | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4125_0712 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4125_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4125-1E | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續(xù)電流:180 mA 電阻汲極/源極 RDS（導(dǎo)通）:4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel |
| 2SK4125-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK4126 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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