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MOS FIELD EFFECT TRANSISTOR
2SK4081
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18785EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
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DESCRIPTION
The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
R
DS(on)
= 5
Ω
MAX. (V
GS
= 10 V, I
D
= 1.0
A)
Low gate charge
Q
G
= 7.2 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
Gate voltage rating:
±
30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4081-S15-AY
Note
Tube 70 p/tube
TO-251 (MP-3-a) typ. 0.39 g
2SK4081(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK4081-ZK-E1-AY
Note
2SK4081-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
V
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
I
D(DC)
±
2.0
A
I
D(pulse)
±
8.0
A
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
Note2
P
T2
P
T1
30
W
1.0
W
Channel Temperature
T
ch
150
°
C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to
+
150
°
C
I
AS
1.4
A
E
AS
117
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3.
Starting T
ch
= 25
°
C, V
DD
= 150 V, R
G
= 25
Ω
,
V
GS
= 20
→
0 V
(TO-251)
(TO-252)
2007
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