- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369209 > 2SK4078-ZK-E2-AY (NEC Corp.) SWITCHING N-CHANNEL POWER MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK4078-ZK-E2-AY |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 182K |
| 代理商： | 2SK4078-ZK-E2-AY |
Data Sheet D18885EJ1V0DS
7
2SK4078
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel side
Draw-out side
MARKING INFORMATION
Pb-free plating marking
K4078
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The 2SK4078 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
Maximum temperature (Package's surface temperature): 260
°
C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220
°
C: 60 seconds or less
Preheating time at 160 to 180
°
C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Partial heating
Maximum temperature (Pin temperature): 350
°
C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK40 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK400 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-247VAR |
| 2SK401 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK402 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-247VAR |
| 2SK403 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK408 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOS FET |
| 2SK4080-ZK-E1-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4080-ZK-E2-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4081 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4081-S15-AY | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。