參數(shù)資料
型號: 2SK3934
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型(- MOSVI)
文件頁數(shù): 3/6頁
文件大?。?/td> 75K
代理商: 2SK3934
2SK3934
2004-12-03
3
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
D
S
R
D
)
DRAIN
SOURCE VOLTAGE V
DS
(V)
I
D
– V
DS
D
D
20
8
0
16
4
DRAIN
SOURCE VOLTAGE V
DS
(V)
I
D
– V
DS
D
D
GATE
SOURCE VOLTAGE V
GS
(V)
I
D
– V
GS
D
D
0
0
2
4
6
8
10
20
50
10V
30
40
10
GATE
SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
0
6
8
10
0
4
8
12
16
20
12
4
2
DRAIN CURRENT I
D
(A)
Y
fs
– I
D
F
Y
f
10
1
10
100
100
1000
0.1
10
100
0.1
100
10
0
2
4
8
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
40
30
20
10
0
50
0
8
20
COMMON SOURCE
Tc
=
25°C
PULSE TEST
6.2V
7V
6.6V
16
12
4
VGS
=
5V
8V
6.4V
5.8V
5.4V
6V
7V
7.5V
8V
6.5V
COMMON SOURCE
Tc
=
25
PULSE TEST
ID
=
15 A
ID
=
7.5 A
ID
=
3.8 A
VGS
=
10 V
COMMON SOURCE
Tc
=
25°C
PULSE TEST
Tc
=
55°C
100
25
6
D
S
D
COMMON SOURCE
VDS
=
20 V
PULSE TEST
Tc
=
25°C
Tc
=
100°C
Tc
=
55°C
6V
6.8V
10V
VGS
=
5 V
COMMON SOURCE
VDS
=
20 V
PULSE TEST
1
1
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