參數(shù)資料
型號(hào)： 2SK3929-01MR
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-CHANNEL SILICON POWER MOSFET
中文描述： 11 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 114K
代理商： 2SK3929-01MR
1
TO-220F
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
Ratings
600
600
11
±44
±30
11
439.1
Unit Remarks
V
V
A
A
V
A
mJ
Note *2
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Max. Power Dissipation
E
AR
7
dV
DS
/dt
dV/dt
-di/dt
P
D
20
5
100
70
2.16
Operating and Storage
Temperature range
Isolation Voltage
T
ch
T
stg
V
ISO
+150
-55 to +150
2
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
Item
2SK3929-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero Gate Voltage Drain Current I
DSS
DS
=600V V
GS
=0V
DS
=480V V
GS
=0V
V
GS
=±30V
I
D
=5.5A V
GS
=10V
I
D
=5.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MH
V
CC
=300V I
D
=5.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
600
3.0
V
V
μA
mA
nA
S
pF
nC
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
1.786
58
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
V
DS
=0V
V
CC
=300V
I
D
=11A
V
GS
=10V
I
F
=11A V
GS
=0V T
ch
=25°C
I
F
=11A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
kVrms
5.0
25
2.0
100
0.80
0.62
10
1100
150
8
17
7
40
8
30
9
10
1.00
120
0.6
5
1650
225
12
26
11
60
12
45
13.5
15
1.50
250
1.5
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Equivalent circuit schematic
200406
V
GS
=-30V
Note *1
Note *3
V
DS
600V
Note *4
Note *5
Tc=25°C
Ta=25°C
t=60sec, f=60Hz
=
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch=
Note *2:StartingTch=25°C,I
AS
=5A,L=32.2mH,
V
CC
=60V,R
G
=50
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
=
=
Note *4:I
F
-I
D
, -di/dt=100A/
μ
s,V
CC
BV
DSS
,Tc=
Note *5:I
F
-I
D
, dv/dt=5kV/
μ
s,V
CC
BV
DSS
,Tc=
=
=
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