參數(shù)資料
型號: 2SK3749
廠商: NEC Corp.
英文描述: N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING
中文描述: N溝道MOSFET的高速開關(guān)
文件頁數(shù): 1/5頁
文件大小: 103K
代理商: 2SK3749
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MOS FIELD EFFECT TRANSISTOR
2SK3749
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG
DATA SHEET
Document No. D17136EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
Gate can be driven by 2.5 V
Because of its high input impedance, there’s no need to
consider drive current
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3749
SC-70 (SSP)
Marking
: G27
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
10 ms, Duty Cycle
50%
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
50
±7.0
±100
±200
150
150
V
V
mA
mA
mW
°C
°C
55 to +150
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
0
0
0
2
0
0
0
+
2
1
3
+
0
+
0
Marking
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
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