參數(shù)資料
型號: 2SK3691-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: 4.5 A, 600 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 135K
代理商: 2SK3691-01MR
3
2SK3691-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
V
Tch [
°
C]
0
5
10
15
20
25
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=4.5A,Tch=25
°
C
480V
300V
Vcc= 120V
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.0
0.5
1.0
1.5
2.0
0.1
1
10
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
I
AS
=1.8A
I
AS
=2.7A
I
AS
=4.5A
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=4.5A
相關PDF資料
PDF描述
2SK3698-01 N-CHANNEL SILICON POWER MOSFET
2SK369 N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
2SK3702 DC / DC Converter Applications
2SK3704 2SK3704
2SK370 N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
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