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參數(shù)資料
| 型號： | 2SK3653B |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 2SK3653B |
Data Sheet D17284EJ1V0DS
2
2SK3653B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Cut-off Current
I
DSS
V
DS
= 2.0 V, V
GS
= 0 V
90
200
430
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 2.0
V, I
D
= 1.0
μ
A
0.37
1.0
V
Forward Transfer Admittance
| y
fs1
|
V
DS
= 2.0 V, I
D
= 30
μ
A, f = 1.0 kHz
300
480
μ
S
| y
fs2
|
V
DS
= 2.0 V, V
GS
= 0 V, f = 1.0 kHz
750
1300
μ
S
Input Capacitance
C
iss
V
DS
= 2.0 V, V
GS
= 0 V, f = 1.0 MHz
4.0
pF
Voltage Gain
G
V
V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
,
1.0
dB
V
IN
= 10 mV, f = 1 kHz
Noise Voltage
NV
V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
,
108.5
dB
A-curve
I
DSS
CLASSIFICATION
MARKING
CE
CF
CH
CJ
I
DSS
(
μ
A)
90 to 180
150 to 240
210 to 350
320 to 430
VOLTAGE GAIN TEST CIRCUIT
C
R
L
V
DD
Out
NOISE VOLTAGE TEST CIRCUIT
C
R
L
V
DD
NV (r.m.s)
JIS A
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