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參數(shù)資料
| 型號： | 2SK3611-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 14 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2SK3611-01MR |
3
2SK3611-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=10A, Tch=25°C
IF=f(VSD):80μs Pulse test,Tch=25°C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
-50
-25
0
25
50
Tch [
°
C]
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
μ
A
V
0
10
20
30
40
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
Vcc= 125V
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
VSD [V]
1.25
1.50
1.75
2.00
0.1
1
10
100
I
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t
ID [A]
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|---|---|
| 2SK3611-01MRSC | 制造商:Fuji Electric 功能描述: |
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