參數(shù)資料
型號: 2SK359
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應晶體管
文件頁數(shù): 3/7頁
文件大?。?/td> 31K
代理商: 2SK359
2SK359
3
150
100
50
Ambient Temperature Ta (
°
C)
0
600
400
200
Maximum Channel Dissipation Curve
C
c
10
2
4
6
8
Drain to Source Voltage V
DS
(V)
0
10
8
6
4
2
Typical Output Characteristics
D
D
V
GS
= 0 V
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–0.7
–0.8
–2.0
–1.6
–1.2
–0.8
–0.4
0
Gate to Source Voltage V
GS
(V)
10.0
8.0
6.0
4.0
2.0
0
Typical Transfer Characteristics
D
D
V
DS
= 10 V
F
E
D
6
10
4
8
2
Drain to Source Voltage V
DS
(V)
0
20
16
12
8
4
Forward Transfer Admittance vs.
Drain to Source Voltage
F
y
f
V
GS
= 0
f = 1 kHz
相關PDF資料
PDF描述
2SK360 Silicon N-Channel MOS FET
2SK3635-Z SWITCHING N-CHANNEL POWER MOSFET
2SK3635 SWITCHING N-CHANNEL POWER MOSFET
2SK3638 SWITCHING N-CHANNEL POWER MOSFET
2SK3638-ZK SWITCHING N-CHANNEL POWER MOSFET
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