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MOS FIELD EFFECT TRANSISTOR
2SK3574
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16260EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark
!
!
!
shows major revised points.
DESCRIPTION
The 2SK3574 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
4.5V drive available
Low on-state resistance
R
DS(on)1
= 13.5 m
MAX. (V
GS
= 10 V, I
D
= 24 A)
Low gate charge
Q
G
= 22 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 48 A)
Built-in gate protection diode
Avalanche capability ratings
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
30
±20
±48
±140
1.5
29
150
V
V
A
A
W
W
°C
°C
A
mJ
–55 to +150
19
36
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, V
GS
= 20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3574
TO-220AB
2SK3574-S
TO-262
2SK3574-ZK
TO-263
2SK3574-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only in Japan.
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