參數(shù)資料
型號(hào)： 2SK3556-01SJ
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-CHANNEL SILICON POWER MOSFET
中文描述： 37 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 130K
代理商： 2SK3556-01SJ
1
P4
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
250
220
±25
±100
±30
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
25
372
20
5
2.02
135
+150
-55 to +150
Operating and storage
temperature range
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3556-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=250V V
GS
=0V
DS
=200V V
GS
=0V
V
I
D
=12.5A
I
D
=12.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
250
3.0
V
V
μA
nA
m
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.926
62.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
GS
=10V
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100μH T
ch
=25°C
I
F
=25A V
GS
=0V T
ch
=25°C
I
F
=25A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
100
10
75
16
8
2000
220
3000
330
15
20
30
60
20
44
14
16
30
30
45
90
30
66
21
24
25
1.10
0.45
1.5
1.65
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tc<
*4 V
DS
=
GS
=-30V *6 t=60sec f=60Hz
*3 I
F
=-I
D
, -di/dt=50A/μs, Vc<
DSS
, Tc<
<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
相關(guān)PDF資料
PDF描述
2SK3556 N-CHANNEL SILICON POWER MOSFET
2SK3560 Silicon N-channel power MOSFET For PDP/For high-speed switching
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK3561(Q) 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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