參數(shù)資料
型號(hào): 2SK3527-01
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: 21 A, 600 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 109K
代理商: 2SK3527-01
3
2SK3527-01
FUJI POWER MOSFET
VGS=f(Qg):ID=17A, Tch=25°C
IF=f(VSD):80μs Pulse test,Tch=25°C
t=f(ID):Vcc=300V, VGS=10V, RG=10
VGS(th)=f(Tch):VDS=VGS,ID=250μA
-50
-25
0
25
50
Tch [
°
C]
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
V
0
20
40
60
80
100
120
0
2
4
6
8
10
12
14
16
18
20
22
24
Vcc= 120V
Vcc= 480V
Qg [nC]
Typical Gate Charge Characteristics
Vcc= 300V
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
10
1
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
450
500
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=17A
相關(guān)PDF資料
PDF描述
2SK3527 N-CHANNEL SILICON POWER MOSFET
2SK3527-01R MOSFETs
2SK3530 Fuji Power MOSFET SuperFAP-G series Target Specification
2SK3530-01MR Fuji Power MOSFET SuperFAP-G series Target Specification
2SK3532-01MR N-CHANNEL SILICON POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3527-01SC 制造商:Fuji Electric 功能描述:
2SK3528-01R 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V
2SK3528-01RSC 制造商:Fuji Electric 功能描述:
2SK3529-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/-
2SK3529-01SC-P 制造商:Fuji Electric 功能描述: