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參數(shù)資料
| 型號(hào)： | 2SK3524-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | 2SK3524-01 |
2
Characteristics
2SK3524-01
FUJI POWER MOSFET
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80μs Pulse test,Tch=25°C
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
VDS [V]
0
2
4
6
8
10
12
14
16
18
20V
10V
8V
7.5V
7.0V
I
Typical Output Characteristics
VGS=6.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
0.1
1
10
0.1
1
10
100
g
ID [A]
Typical Transconductance
0
2
4
6
8
10
12
14
16
18
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
R
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3525-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
| 2SK3527-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3528-01R | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V |
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