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參數(shù)資料
| 型號： | 2SK3521-01SJ |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 120K |
| 代理商： | 2SK3521-01SJ |
3
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80μs Pulse test,Tch=25°C
2SK3521-01S,L,SJ
FUJI POWER MOSFET
VGS=f(Qg):ID=8A, Tch=25°C
t=f(ID):Vcc=300V, VGS=10V, RG=10
0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
400V
250V
Vcc= 100V
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
10
0
10
1
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=8A
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
V
Tch [
°
C]
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3522 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3522-01 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3523-01R | POWER MOSFET |
| 2SK3524 | N-CHANNE SILLCON POWER MOSFET |
| 2SK3524-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3522-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.2Ohm;ID +/-25A;TO-247;PD 335W;VGS +/-30V |
| 2SK3522-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3523-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3524-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.93Ohm;ID +/-8A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK3525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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