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參數(shù)資料
| 型號(hào)： | 2SK3503 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 114K |
| 代理商： | 2SK3503 |
Data Sheet D15395EJ2V0DS
3
2SK3503
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
P
T
T
A
- Ambient Temperature - C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|
f
|
5
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
D
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
D
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
D
I
D
- Drain Current - mA
30
0
60
90
120
150
1
50
40
30
20
10
0
2
3
4
5
2.0 V
1.8 V
1.6 V
1.4 V
V
GS
= 1.2 V
500
V
DS
= 3.0 V
Pulsed
10
10
20
50
200
T
A
= –25C
25C
75C
200
100
50
20
100
0.5
200
5
1
2
5
20
100
50
20
10
10
50 100 200
500
T
A
= –25C
Pulsed
V
GS
= 1.5 V
2.5 V
4.0 V
0.5
200
5
1
2
5
20
100
50
20
10
10
50 100 200
500
V
GS
= 1.5 V
2.5 V
4.0 V
0.5
200
5
1
2
5
20
100
50
20
10
10
50 100 200
500
T
A
= 75C
V
GS
= 1.5 V
2.5 V
4.0 V
Pulsed
T
A
= 25C
Pulsed
T
= 75C
Pulsed
200
160
120
80
40
180
210
Mounted on ceramic substrate
of 3.0 cm
2
x 0.64 mm
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