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參數(shù)資料
| 型號(hào)： | 2SK3476 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SK3476 |
2SK3476
2002-01-09
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0 V
5
A
Gate-source leakage current
I
GSS
V
GS
10 V
5
A
Threshold voltage
V
th
V
DS
7.2 V, I
D
2 mA
0.55
1.05
1.55
V
Drain-source on-voltage
V
DS (ON)
V
GS
10 V, I
D
75 mA
18
mV
Forward transconductance
Y
fs
V
DS
7.2 V, I
DS
1 A
1
S
Input capacitance
C
iss
V
DS
7.2 V, V
GS
0 V, f 1 MHz
53
pF
Output capacitance
C
oss
V
DS
7.2 V, V
GS
0 V, f 1 MHz
49
pF
Output power
P
O
7
W
Drain efficiency
D
60
%
Power gain
G
P
V
DS
7.2 V,
I
idle
500 mA (V
GS
adjust),
f 520 MHz, P
i
500 mW,
11.4
dB
Low voltage output power
P
OL
V
DS
6.0 V,
I
idle
500 mA (V
GS
adjust),
f 520 MHz, P
i
500 mW,
5
W
Load mismatch
V
DS
10 V, P
O
7 W,
V
GS
adjust, P
i
adjust,
f 520 MHz,
VSWR LOAD 20:1 all phase
No degradation
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f 520 MHz, V
DS
7.2 V, I
idle
500 mA, P
i
500 mW)
P
i
Z
G
50
P
O
C1
C2
C9
C4
C12
C13
L1
R2
C14
C15
L2
V
GS
V
DS
C10
Z
L
50
C1: 15 pF
C2: 11 pF
C3: 9 pF
C4: 30 pF
C5: 30 pF
C6: 11 pF
C7: 8 pF
C8: 9 pF
C9: 2200 pF
C10: 2200 pF
C11: 2200 pF
C12: 10000 pF
C13: 10 F
C14: 10000 pF
C15: 10 F
L1: 0.6 mm enamel wire, 5.8ID, 4T
L2: 0.6 mm enamel wire, 5.8ID, 8T
R1: 2.2
R2: 1.5 k
C3
R1
C11
C5
C6
C7
C8
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