參數(shù)資料
型號: 2SK3204
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/4頁
文件大?。?/td> 42K
代理商: 2SK3204
1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13796EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP (K)
Printed in Japan
DATA SHEET
The mark
shows major revised points.
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance :
R
DS(on)1
= 34 m
(MAX.) (V
GS
= 10 V, I
D
= 8 A)
R
DS(on)2
= 50 m
(MAX.) (V
GS
= 4 V, I
D
= 8 A)
Low C
iss
:
C
iss
= 940 pF (TYP.)
Built-in gate protection diode.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
±20
V
Gate to Source Voltage
V
GSS(DC)
+20,
10
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±15
A
I
D(pulse)
±45
A
Total Power Dissipation (T
A
= 25 °C)
P
T
1.8
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to +150
°C
I
AS
15
A
E
AS
22.5
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1 %
2.
Starting T
ch
= 25
°C, R
G
= 25
, V
GS
= 20
V
0 V
THERMAL RESISTANCE
Channel to Ambient
Rth
(ch-A)
69.4
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3204
MP-10
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