參數(shù)資料
型號: 2SK2980
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 2/9頁
文件大?。?/td> 43K
代理商: 2SK2980
2SK2980
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
30
V
Gate to source voltage
+12
V
–10
V
Drain current
I
D
I
D(pulse)
Pch
Note2
1.0
A
Drain peak current
Note1
4
A
Channel dissipation
0.8
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
相關(guān)PDF資料
PDF描述
2SK2981 Switching N-channel power MOS FET industrial use
2SK2981-Z Switching N-channel power MOS FET industrial use
2SK2983-ZJ Switching N-channel power MOS FET industrial use
2SK2983 Switching N-channel power MOS FET industrial use
2SK2983-S Switching N-channel power MOS FET industrial use
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