參數(shù)資料
型號(hào): 2SK2941
廠(chǎng)商: NEC Corp.
元件分類(lèi): MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 74K
代理商: 2SK2941
1997
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2941
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D11007EJ1V0DS00 (1st edition)
Date Published May 1997 N
The information in this document is subject to change without notice.
DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high
current switching application.
FEATURE
Low On-Resistance
R
DS(on)1
= 14 m
Typ. (V
GS
= 10 V, I
D
=18 A)
R
DS(on)2
= 22 m
Typ. (V
GS
= 4 V, I
D
= 18 A)
Low C
iss
C
iss
= 1250 pF Typ.
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Maximum Voltages and Currents
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)*
Maximum Power Dissipation
Total Power Dissipation (T
A
= 25 C)
Total Power Dissipation (T
C
= 25 C)
Maximum Temperature
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(Pulse
)
30
±
20
±
35
±
140
V
V
A
A
P
T
P
T
1.5
60
W
W
T
ch
T
stg
150
C
C
–55 to + 125
*
PW
10
μ
s, Duty Cycle
1%
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device
acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to
this device.
1 2 3
4
10.6 MAX.
10.0
3.6±0.2
6
1
5
1
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
2.8±0.2
0.5±0.2
1.3±0.2
4.8 MAX.
1.3±0.2
0.75±0.1
2.54
2.54
Gate
Drain
Dody
Diode
Source
Gate Protection
Diode
PACKAGE DIMENSIONS
inmillimeters
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