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參數(shù)資料
| 型號(hào)： | 2SK2922 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET UHF Power Amplifier |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管超高頻功率放大器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SK2922 |
2SK2922
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
Pch
Note2
10
V
Gate to source voltage
±
6
V
Drain current
0.7
A
Drain peak current
Note1
1.4
A
Channel dissipation
3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10ms, duty cycle
≤
50 %
2. Value at Tc = 25
°
C
Tstg
–45 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Zero gate voltage drain current
I
DSS
I
GSS
V
GS(off)
Ciss
—
—
100
μ
A
μ
A
V
DS
= 10 V, V
GS
= 0
V
GS
=
±
6V, V
DS
= 0
I
D
= 3mA, V
DS
= 5V
V
GS
= 2V, V
DS
= 0, f = 1MHz
V
DS
= 5, V
GS
= 0, f = 1MHz
V
= 4.7V, f =836.5Mhz
Pin = 23dBm
Gate to source leak current
—
—
±
5.0
Gate to source cutoff voltage
0.4
—
1.2
V
Input capacitance
—
27
—
pF
Output capacitance
Coss
—
13
—
pF
Output Power
Pout
31
—
—
dBm
Drain Rational
η
D
57
—
—
%
V
= 4.7V, f =836.5Mhz
Pin = 23dBm
Note: 1. Marking is “HX”.
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