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參數(shù)資料
| 型號(hào)： | 2SK291 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 硅N溝道結(jié)場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | 2SK291 |
2SK291
4
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
I
i
14
12
10
8
6
4
–1.0
–0.6
–0.8
–0.4
0
–0.2
V
= 5 V
f = 1 MHz
Noise Voltage Referred to Input vs.
Signal Source Resistance
20
10
5
2
1.0
0.5
0.2
1
100
Signal Source Resistance R
g
(
)
N
n
1 k
10 k
10
√
V
DS
= 5 V
I
Ta = 25
°
C
f = 120 Hz
100 kHz
√
g
Noise Voltage Referred
to Input vs. Frequency
50
20
10
5
2
1.0
0.5
10
1 k
Frequency f (Hz)
N
n
10 k
100 k
100
√
V
DS
= 5 V
R
g
= 0
I
D
= 2 mA
5 mA
10 mA
Noise Voltage Referred to Input vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
I
D
= 10 mA
R
g
= 0
f = 1 kHz
100 kHz
20
10
5
2
1.0
0.5
0.2
0.2
1.0
5
20
0.5
2
10
N
n
√
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