參數(shù)資料
型號: 2SK2912
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應晶體管高速電源開關
文件頁數(shù): 3/10頁
文件大?。?/td> 53K
代理商: 2SK2912
2SK2912(L), 2SK2912(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
±
10
μ
A
μ
A
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
Zero gate voltege drain
current
10
Gate to source cutoff voltage
V
GS(off)
1.5
2.5
V
I
D
= 1mA, V
DS
= 10V
I
D
= 20A, V
GS
= 10V*
1
I
D
= 20A, V
GS
= 4V*
1
I
D
= 20A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Static drain to source on state R
DS(on)
resistance
15
20
m
m
R
DS(on)
|y
fs
|
Ciss
25
40
Forward transfer admittance
20
35
S
Input capacitance
1500
pF
Output capacitance
Coss
720
pF
Reverse transfer capacitance
Crss
200
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
20
ns
I
D
= 20A, V
GS
= 10V
R
L
= 1.5
Rise time
180
ns
Turn-off delay time
200
ns
Fall time
200
ns
Body to drain diode forward
voltage
0.95
V
I
F
= 40A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
70
V
I
= 40A, V
= 0
diF/ dt = 50A/
μ
s
相關PDF資料
PDF描述
2SK2912L Silicon N Channel MOS FET High Speed Power Switching
2SK2912S Silicon N Channel MOS FET High Speed Power Switching
2SK2919 Ultrahigh-Speed Switching Applications
2SK291 Silicon N-Channel Junction FET
2SK2922 Silicon N Channel MOS FET UHF Power Amplifier
相關代理商/技術參數(shù)
參數(shù)描述
2SK2912L 制造商:Renesas Electronics Corporation 功能描述:
2SK2912L-E 制造商:Renesas Electronics Corporation 功能描述:
2SK2912S(TR-E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2914 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube
2SK2914(F) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB