- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50000 > 2SK2884 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK2884 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 426K |
| 代理商： | 2SK2884 |
2SK2884
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2884
Chopper Regulator, DCDC Converter Applications
Low drainsource ON resistance
: RDS (ON) = 1.9 (typ.)
High forward transfer admittance
: |Yfs| = 3.8 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
800
V
Draingate voltage (RGS = 20 k)
VDGR
800
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation (Tc=25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
370
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2885(S) | 0.025 ohm, POWER, FET |
| 2SK2910 | 800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2916 | 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2918-01MR | 20 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2928 | 15 A, 60 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2884(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 800V 5A 3-Pin(3+Tab) TO-220FL 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 5A TO220FL |
| 2SK2884(SM，Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 5A TO220SM |
| 2SK2884(TE24L) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 5A TO220SM |
| 2SK2884(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 5A TO220SM |
| 2SK2884-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。