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參數(shù)資料
| 型號： | 2SK2858 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應晶體管高速開關 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SK2858 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1996, 1999
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D11706EJ2V0DS00 (2nd edition)
August 1999 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2858
SC-70(SSP)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
±20
V
Drain Current (DC)
Drain Current (pulse)
Note
I
D(DC)
±0.1
A
I
D(pulse)
±0.4
A
Total Power Dissipation
P
T
150
mW
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Note
PW
≤
10
μ
s, Duty Cycle
≤
1 %
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
2.1 ± 0.1
1.25 ± 0.1
0
0
0
2
0
0
0
+
–
2
1
3
+
0
–
+
0
–
Marking
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Marking: G24
Gate
Drain
Electrode
Connection
1.Source
2.Gate
3.Drain
#
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2859 | Ultrahigh-Speed Switching Applications |
| 2SK2864 | Ultrahigh-Speed Switching Applications |
| 2SK2869 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2885 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2885L | Silicon N Channel MOS FET High Speed Power Switching |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2858-T1(A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC70 Tape & Reel |
| 2SK2862 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 3A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2862(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SK2864-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 20A ZP |
| 2SK2865(Q) | 制造商:Toshiba 功能描述:Nch 600V 2A 5@10V PW-Mold Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold |
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