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參數資料
| 型號： | 2SK2857-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 4000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK2857-AZ |
Data Sheet D11648EJ2V0DS00
2
2SK2857
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.4
2.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 2 A
1
S
RDS(on)1
VGS = 4 V, ID = 1.5 A
150
220
m
Drain to Source On-state Resistance
RDS(on)2
VGS = 10 V, ID = 2.5 A
110
150
m
Input Capacitance
Ciss
265
pF
Output Capacitance
Coss
125
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
56
pF
Turn-on Delay Time
td(on)
8ns
Rise Time
tr
11
ns
Turn-off Delay Time
td(off)
52
ns
Fall Time
tf
VDD = 25 V, ID = 1 A
VGS(on) = 10 V, RG = 10
RL = 25
22
ns
Total Gate Charge
QG
10.6
nC
Gate to Source Charge
QGS
0.7
nC
Gate to Drain Charge
QGD
VDS = 48 V
VGS = 10 V
ID = 4 A
3.5
nC
Diode Forward Voltage
VF(S-D)
IF = 4 A, VGS = 0 V
0.86
V
Reverse Recovery Time
trr
49
ns
Reverse Recovery Charge
Qrr
IF = 4 A, VGS = 0 V
di/dt = 50 A /
s
26.6
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr
td(off)
tf
10 %
τ
RG = 10
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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