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參數(shù)資料
| 型號： | 2SK2725 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SK2725 |
2SK2725
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
25V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
Zero gate voltege drain
current
—
—
10
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
2.5
—
3.5
V
I
D
= 1mA, V
DS
= 10V*
1
I
D
= 3A, V
GS
= 10V*
1
Static drain to source on state
resistance
—
1.2
1.6
Forward transfer admittance
|y
fs
|
Ciss
2.5
4.5
—
S
I
D
= 3A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Input capacitance
—
630
—
pF
Output capacitance
Coss
—
250
—
pF
Reverse transfer capacitance Crss
—
55
—
pF
Total gate charge
Qg
—
13.5
—
nc
V
DD
= 400V
V
GS
= 10V
I
D
= 5A
V
GS
= 10V, I
D
= 3A
R
L
= 10
Gate to source charge
Qgs
—
3.5
—
nc
Gate to drain charge
Qgd
—
5.0
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
11
—
ns
Rise time
—
45
—
ns
Turn-off delay time
—
40
—
ns
Fall time
—
50
—
ns
Body to drain diode forward
voltage
—
0.95
—
V
I
D
= 5A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
200
—
ns
I
= 5A, V
= 0
diF/ dt = 100A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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