參數(shù)資料
型號(hào): 2SK2719
元件分類: JFETs
英文描述: 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2-16C1B, SC-65, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 208K
代理商: 2SK2719
2SK2719
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Low drain-source ON resistance: RDS (ON) = 3.7 (typ.)
High forward transfer admittance: |Yfs| = 2.6 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 k)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
3
Drain current
Pulse
(Note 1)
IDP
9
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
295
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy
(Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50.0
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 H, RG = 25 , IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1. Gate
2. Drain (heat sink)
3. Source
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