參數(shù)資料
型號： 2SK2655
廠商： FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述： N-channel MOS-FET
中文描述： N溝道場效應(yīng)管
文件頁數(shù)： 1/2頁
文件大?。?/td> 348K
代理商： 2SK2655
2SK2655-01R
FAP-IIS Series
N-channel MOS-FET
2
900V
8A
100W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
ch
≤
150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
C
=25°C),
unless otherwise specified
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
A
mJ
W
°C
°C
900
8
32
±30
8
141
100
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=900V
V
GS
=0V
V
GS
=±30V
I
D
=4A
I
D
=4A
V
DS
=25V
Min.
900
3,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
4,0
10
0,2
10
1,48
4,5
500
1,0
100
2,0
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
5
1200
180
90
30
120
95
60
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=8A
V
GS
=10V
R
GS
=10
T
ch
=25°C
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
8
1,0
1000
12
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
30
1,25
Unit
°C/W
°C/W
Collmer Semconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com- 11/98
相關(guān)PDF資料
PDF描述
2SK2655-01R N-channel MOS-FET
2SK2661 N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SJ349 P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
2SK2662 High Speed,High Voltage Switching Application N Channel MOSFET(高速高電壓轉(zhuǎn)換用 N溝道 MOS場效應(yīng)管)
2SK2745 High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2655-01R 制造商: 功能描述: 制造商:undefined 功能描述:
2SK2655-01RSC 制造商:Fuji Electric 功能描述:
2SK2661 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220 - Rail/Tube
2SK2661(F) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,500V/5A/1.5ohm,TO-220AB
2SK2662 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR PANASONIC
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*