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參數(shù)資料
| 型號： | 2SK2651 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | N溝道場效應管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 383K |
| 代理商： | 2SK2651 |
N-channel MOS-FET
900V
2,5
> Characteristics
2SK2651-01MR
FAP-IIS Series
6A
50W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source-On-State Resistance vs. T
ch
R
DS(on)
=f(Tch): I
D
=3A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test;V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=90V; I
AV
=6A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
↑
C
↑
I
F
7
E
8
9
V
DS
[V]
→
Starting Tch [°C]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe operation area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
P
D
10
↑
I
D
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2651-01MR | N-channel MOS-FET |
| 2SK2652 | N-channel MOS-FET |
| 2SK2652-01 | N-channel MOS-FET |
| 2SK2653-01R | N-channel MOS-FET |
| 2SK2654-01 | N-channel MOS-FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2651-01MR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2651-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK2652-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK2653-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK2654-01SC | 制造商:Fuji Electric 功能描述: |
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