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參數(shù)資料
| 型號： | 2SK2645 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | N溝道場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 366K |
| 代理商： | 2SK2645 |
N-channel MOS-FET
600V
1,2
> Characteristics
2SK2645-01MR
FAP-IIS Series
9A
50W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=4A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=9A; Tc=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
↑
C
↑
V
D
↑
V
G
↑
I
F
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=60V; I
AV
=9A
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
E
10
↑
I
D
12
Starting T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
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