參數(shù)資料
型號(hào)： 2SK2596BX
廠商： Renesas Technology Corp.
英文描述： Silicon N-Channel MOS FET UHF Power Amplifier
中文描述： 硅N溝道場(chǎng)效應(yīng)晶體管超高頻功率放大器
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 68K
代理商： 2SK2596BX
2SK2596
Rev.3.00, Feb.14.2005, page 3 of 4
24
22
20
18
16
-10
-6
-2
2
6
10
14
V
DS
= 0
f = 1 MHz
100
0.1
20
50
10
2
1
5
0.2
0.5
1
2
5
10
20
V
GS
= 0
f = 1 MHz
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
I
Drain to Source V
DS
(V)
O
Output Capacitance vs.
Drain to Source Voltage
Output Power, Drain Efficiency
vs. Input Power
O
Input power Pin (W)
D
η
D
Reverse Transfer Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
R
100
0.1
20
50
10
2
1
5
0.2
0.5
1
2
5
10
20
V
GS
= 0
f = 1 MHz
2.5
2.0
1.5
1.0
0.5
0
100
80
60
40
20
0
100
80
60
40
20
V
DS
= 12 V
I
DO
= 100 mA
f = 836.5 MHz
Po
η
D
0.01
10
2
1
5
0.2
0.5
0.1
0.02
0.01
0.05
0.02
0.05
0.1
0.2
0.5
1
Tc = -25°C
25°C
75°C
1.2
1.0
0.8
0.6
0.4
0.2
-25
0
0
25
50
75
100
125
1 mA
10 mA
V
DS
= 12 V
I
D
= 0.1 mA
Drain to Source Saturation Voltage
vs. Drain Current
Drain Current I
D
(A)
Ambient Temperature Ta (°C)
G
Gate to Source Cutoff Voltage vs.
Ambient Temperature
G
D
V
D
(
V
V
DS
= 12 V
Pulse Test
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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