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參數(shù)資料
| 型號： | 2SK2595 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N-Channel MOS FET UHF Power Amplifier |
| 中文描述： | 硅N溝道場效應(yīng)晶體管超高頻功率放大器 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2SK2595 |
2SK2595
Rev.4.00, Feb.14.2005, page 2 of 13
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
I
DSS
I
GSS
V
GS(off)
Ciss
Coss
Pout
η
D
Min.
—
—
0.6
—
—
5.37
50
Typ
—
—
—
68
27
7
60
Max.
10
±
5.0
1.3
—
—
—
—
Unit
μ
A
μ
A
V
pF
pF
W
%
Test Conditions
V
DS
= 12 V, V
GS
= 0
V
GS
= ±10 V, V
DS
= 0
V
DS
= 12 V, I
D
= 6 mA
V
GS
= 5 V, V
DS
= 0, f = 1 MHz
V
DS
= 12 V, V
GS
= 0, f = 1 MHz
V
DS
= 12 V, I
DO
= 500 mA,
f = 836.5 MHz, Pin = 0.89 W
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Output capacitance
Output Power
Drain Efficiency
Main Characteristics
32
24
16
8
0
50
100
150
200
10
8
6
4
2
0
2
4
6
8
10
4 V
3 V
V
GS
= 2 V
5 V
6 V
10V
8 V
5
4
3
2
1
0
1
2
3
4
5
Tc = - 25
°
C
25
°
C
75
°
C
0.1
10
2
5
1
0.2
0.5
0.1
Tc = -
25
°
C
25
°
C
75
°
C
0.2
0.5
1
2
5
10
C
Case Temperature Tc (
°
C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
Drain Current I
D
(A)
F
f
|
Forward Transfer Admittance
vs. Drain Current
V
DS
= 12 V
Pulse Test
V
DS
= 12 V
Pulse Test
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|---|---|
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