參數(shù)資料
型號： 2SK2397-01MR
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel MOS-FET
中文描述： 5 A, 800 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 161K
代理商： 2SK2397-01MR
2SK2397-01MR
FAP-II Series
N-channel MOS-FET
2,3
800V
5A
50W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Avalanche Proof
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage(R
GS
=20K
)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
V
A
A
V
W
°C
°C
800
800
5
20
±30
50
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=800V
V
GS
=0V
V
GS
=±30V
I
D
=2,5A
I
D
=2,5A
Min.
800
2,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
GS
=0V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=5A
V
GS
=10V
R
GS
=25
4,0
10
0,2
10
1,7
3,5
800
120
60
25
100
130
70
5,0
500
1,0
100
2,3
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
1,8
1200
180
90
40
150
200
110
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L=100μH T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
5
1,0
700
15,0
1,5
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
2,5
Unit
°C/W
°C/W
相關(guān)PDF資料
PDF描述
2SK2398 High Speed, High Voltage Switching Application N Channel MOSFET(高速高電壓轉(zhuǎn)換用的N溝道MOS場效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2398 功能描述:MOSFET N-CH 60V 45A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK2398_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications
2SK2398_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter and Motor Drive Applications
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2SK2399(Q) 功能描述:MOSFET N-Ch 100V 5A 0.17 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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