參數(shù)資料
型號(hào): 2SK2158
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場(chǎng)效應(yīng)晶體管的高速開(kāi)關(guān)
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 60K
代理商: 2SK2158
2SK2158
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
T
A
- Ambient Temperature - C
d
100
80
60
40
20
0
30
60
90
120
150
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
200
160
120
80
40
0
1
2
3
4
5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
7V
35V
30V
2.5 V
2.0 V
1.5 V
V
GS
= 1.0 V
V
GS
- Gate to Source Voltage - V
I
D
100
10
1
0.1
0.01
0.0010
1
2
TRANSFER CHARACTERISITICS
I
D
- Drain Current - mA
|
f
|1 000
100
10
1
0.1
1
10
100
1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 3 V
T
A
= 75 C
25 C
–25 C
T
A
= –25 C
25 C
75 C
I
D
- Drain Current - mA
R
D
70
60
50
40
30
20
10
0
0.1
1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
= 1.5 V
= 1.5 V
V
GS
= 2.5 V
T
A
= 75 C
25 C
–25 C
I
D
- Drain Current - mA
R
D
70
60
50
40
30
20
10
0
1
10
100
1 000
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
T
A
= 75 C
25 C
–25 C
V
DS
= 3 V
相關(guān)PDF資料
PDF描述
2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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2SK2170 N-Channel Junction Silicon FET for Impedance Converter Applications(阻抗轉(zhuǎn)換器應(yīng)用的N溝道結(jié)型硅場(chǎng)效應(yīng)管)
2SK2171 N-Channel Junction Silicon FET for High-Frequency, Low-Frequency Amplifier Analog Switch Applications(應(yīng)用于高頻,低頻放大器模擬開(kāi)關(guān)的N溝道結(jié)型場(chǎng)效應(yīng)管)
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