參數(shù)資料
型號: 2SK2141
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應晶體管 工業(yè)級
文件頁數(shù): 4/8頁
文件大?。?/td> 99K
代理商: 2SK2141
2SK2141
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
-1 000
0.001
100
10
1.0
0.1
0.01
10
100
1 m
10 m
100 m
1
10
100
1 000
T
C
= 25 °C
Single Pulse
R
th (ch-a)
= 62.5 °C/W
R
th (ch-c)
= 3.57 °C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
I
D
- Drain Current - A
y
8
20
16
2.0
V
GS
- Gate to Source Voltage - V
R
D
-
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - °C
V
G
-
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
10
100
0.8
I
D
- Drain Current - A
R
D
-
I
D
= 6.0 A
3.0 A
1.2 A
– 50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
10
0.1
1.0
1.0
0
0.4
2.0
0
0.1
V
DS
= 10 V
Pulsed
V
DS
= 10 V
I
D
= 1 mA
4
12
Pulsed
1.2
1.6
V
GS
= 10 V
20 V
Pulsed
0
T
ch
= –25 °C
25 °C
75 °C
125 °C
μ
μ
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