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參數資料
| 型號： | 2SK1622S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 16K |
| 代理商： | 2SK1622S |
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
– Can be driven from 5 V source
Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body to drain diode reverse drain current
I
DR
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
Value at T
C
= 25 °C
Symbol
Ratings
Unit
60
V
±20
V
25
A
100
A
25
A
50
W
150
°C
–55 to +150
°C
2SK1622
L
, 2SK1622
S
Silicon N-Channel MOS FET
123
L type
2, 4
1
3
1. Gate
2. Drain
3. Source
4. Drain
123
S type
LDPAK
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| 2SK1626-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 450V 5A 3-Pin(3+Tab) TO-220FM Box |
| 2SK1629(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK163 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1636S(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1637(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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