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參數(shù)資料
| 型號： | 2SK1215 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 2SK1215 |
2SK1215
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSX
*
1
V
GSS
I
D
I
G
Pch
20
V
Gate to source voltage
±
5
V
Drain current
30
mA
Gate current
±
1
mA
Channel power dissipation
100
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. V
GS
= –4 V
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
20
—
—
V
I
D
= 100
μ
A, V
GS
= –4 V
Gate cutoff current
I
GSS
I
DSS
*
1
V
GS(off)
|y
fs
|
Ciss
—
—
±
20
nA
V
GS
=
±
5 V, V
DS
= 0
V
DS
= 10 V, V
GS
= 0
V
DS
= 10 V, I
D
= 10
μ
A
V
DS
= 10 V, V
GS
= 0, f = 1 kHz
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
Drain current
4
—
12
mA
Gate to source cutoff voltage
0
—
–2.0
V
Forward transfer admittance
8
14
—
mS
Input capacitance
—
2.5
—
pF
Output capacitance
Coss
—
1.6
—
pF
Reverse transfer capacitance
Crss
—
0.03
—
pF
Power gain
PG
24
—
—
dB
V
= 10 V, V
GS
= 0,
f = 100 MHz
Noise figure
Note:
Grade
NF
—
—
3
dB
1. The 2SK1215 is grouped by I
DSS
as follows.
D
E
F
Mark
IGD
IGE
IGF
I
DSS
4 to 8
6 to 10
8 to 12
See characteristic curves of 2SK359.
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| 2SK1272 | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SK1273 | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SK1274 | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1215D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-323 |
| 2SK1215E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-323 |
| 2SK1215F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-323 |
| 2SK1215IGE(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1215IGETL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET |
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