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參數(shù)資料
| 型號： | 2SK1109 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK1109 |
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confirm that this is the latest version.
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2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK1109
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D15940EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK1109 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
1000
μ
S TYP. (I
DSS
= 100
μ
A)
1600
μ
S TYP. (I
DSS
= 200
μ
A)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1109
SC-59 (MM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Note
V
DSX
20
V
Gate to Drain Voltage
V
GDO
–20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
80
mW
Junction Temperature
T
j
125
°C
Storage Temperature
T
stg
–55 to +125
°C
Note
V
GS
= –1.0 V
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
1
2
3
5
1
1
1
1.1
0.8
2.9 ± 0.2
1. Source
2. Drain
3. Gate
EQUIVALENT CIRCUIT
Source
Gate
Drain
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1109(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1112 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251VAR |
| 2SK1113 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2SK1113 |
| 2SK1117 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK1117 |
| 2SK1118 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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