參數(shù)資料
型號(hào)： 2SJ626
廠商： NEC Corp.
英文描述： Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V
中文描述： MOS場效應(yīng)管
文件頁數(shù)： 4/8頁
文件大?。?/td> 65K
代理商： 2SJ626
Data Sheet D15962EJ1V0DS
4
2SJ626
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
- 2
- 4
- 6
0
- 1
- 2
- 3
Pulsed
4.5 V
V
GS
=
10 V
4.0 V
I
D
-0.0001
-0.001
-0.01
-0.1
-1
-10
- 1
- 2
- 3
- 4
- 5
Pulsed
V
DS
=
10 V
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
- 1.6
- 1.8
- 2
- 2.2
- 2.4
- 2.6
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1.0 mA
|
f
0.01
0.1
1
10
-0.01
-0.1
-1
-10
Pulsed
V
DS
=
10 V
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
0
200
400
600
800
-50
0
50
100
150
V
GS
=
4.0 V
10 V
4.5 V
Pulsed
I
D
=
1.0 A
0
200
400
600
800
0
- 4
- 8
- 12
- 16
- 20
Pulsed
I
D
=
1.0 A
R
D
T
ch
– Channel Temperrature -
°
C
R
D
V
GS
- Gate to Source Voltage - V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ626-T1B 制造商:Renesas Electronics Corporation 功能描述:
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2SJ628 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ629 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SJ630 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
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