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參數(shù)資料
| 型號(hào)： | 2SJ619 |
| 廠商： | Toshiba Corporation |
| 英文描述： | ZD-3.6V- 1 W |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類型（L2MOSV） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 220K |
| 代理商： | 2SJ619 |
2SJ619
2002-08-09
4
D
D
G
t
Case temperature Tc (°C)
R
DS (ON)
Tc
D
D
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
D
Drain-source voltage V
DS
(V)
Capacitance – V
DS
C
Case temperature Tc (°C)
V
th
Tc
Case temperature Tc (°C)
P
D
Tc
D
D
G
G
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
0.3
30
0.5
3
10
5
1.0
Common source
Tc 25°C
pulse test
3
VGS 10 V
5
1
2
0, 1
0
0.2
0.4
0.6
0.8
1.0
0
0.5
0.1
0.3
0.2
0.4
Common source
pulse test
ID 8 V
4
8
2
2, 4
VGS 4 V
VGS 10 V
80
40
0
40
80
160
120
100
300
1000
1
0.1
100
10
Ciss
Coss
Crss
Common source
VGS 0 V
f 1 MHz
Tc 25°C
10
30
500
3000
0.3
3
30
5000
50
100
20
40
80
0
0
80
120
200
40
160
60
100
20
60
40
80
0
0
Common source
ID 16 A
Tc 25°C
pulse test
40
VDD 80 V
VGS
VDS
20
4
12
8
16
0
20
20
40
60
80
100
0
40
80
120
160
1
3
2
4
0
80
40
Common source
VDS 10 V
ID 1 mA
pulse test
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